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| hexfet power mosfet notes through are on page 9 applications ? ?? v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 4.9 (@v gs = 4.5v) 6.8 q g typ. 19.4 nc i d (@t c(bottom) = 25c) 25 a m ? note form quantity irfh8321trpbf pqfn 5mm x 6mm tape and reel 4000 orderable part number package type standard pack features benefits low thermal resistance to pcb (< 2.3c/w) enable better thermal dissipation low profile (<1.2mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability ! """## $%&!%' ( ()* + ,-%&!% absolute maximum ratings pa ram ete r units v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range max. 21 52 332 20 17 83 25 v w a c -55 to + 150 3.4 0.027 54 """## $%&!%' ( ()* + ,-%&!% % d s g t he rm a l re si sta n ce parameter typ. max. units r qjc (bottom) junction-to-case ??? 2.3 r qjc (top) junction-to-case ??? 31 c/w r qja junction-to-ambient ??? 37 r qja (<10s) junction-to-ambient ??? 25 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? bv dss / ? t j breakdown voltage temp. coefficient ??? 19.7 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 3.9 4.9 ??? 5.4 6.8 v gs(th) gate threshold voltage 1.2 1.7 2.2 v ? v gs(th) gate threshold voltage coefficient ??? -6.4 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 68 ??? ??? s q g total gate charge ??? 39 59 nc q g total gate charge ??? 19.4 29.1 q gs1 pre-vth gate-to-source charge ??? 5.0 ??? q gs2 post-vth gate-to-source charge ??? 1.9 ??? q gd gate-to-drain charge ??? 6.7 ??? q godr gate charge overdrive ??? 5.8 ??? q sw switch charge (q gs2 + q gd ) ??? 8.6 ??? q oss output charge ??? 16.7 ??? nc r g gate resistance ??? 0.9 2.7 ? t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 20 ??? t d(off) turn-off delay time ??? 12 ??? t f fall time ??? 6.8 ??? c iss input capacitance ??? 2600 ??? c oss output capacitance ??? 530 ??? c rss reverse transfer capacitance ??? 270 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 12 18 ns q rr reverse recovery charge ??? 20 30 nc t on forward turn-on time time is dominated by parasitic inductance m ? i d = 20a i d = 20a ? = 1.0mhz v dd = 15v, v gs = 4.5v typ. v gs = -20v ??? v ds = 10v, i d = 20a di/dt = 500 a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. ??? t j = 25c, i f = 20a, v dd = 15v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 20a v ds = 24v, v gs = 0v v gs = 4.5v, i d = 16a v ds = v gs , i d = 50 a ??? ??? 332 ??? ??? mosfet symbol a v ds = 16v, v gs = 0v pf v ds = 24v, v gs = 0v, t j = 125c max. 93 nc v ds = 15v v gs = 4.5v v gs = 10v, v ds = 15v, i d = 20a v gs = 20v 25 v gs = 0v v ds = 10v conditions 20 r g =1.8 ? na ns """## $%&!%' ( ()* + ,-%&!% , fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.75v bottom 2.5v ? 60 s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60 s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.75v bottom 2.5v """## $%&!%' ( ()* + ,-%&!% . fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100 sec dc limited by source bonding technology """## $%&!%' ( ()* + ,-%&!% fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.8a 8.9a bottom 20a 0 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c fig 14. typical avalanche current vs.pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) """## $%&!%' ( ()* + ,-%&!% fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr v ds 90% 10% v gs t d(on) t r t d(off) t f ???? ??????? + - fig 15. (/ 0* 010 2 for n-channel hexfet power mosfets ???? ? ???? ?? ?? p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 3 3 + - + + + - - - ??? !" # $ ??? ! % &'& & ??? # (( ??? &'& & ) ! ' 1k vcc dut 0 l """## $%&!%' ( ()* + ,-%&!% 4 + 5! !, + 5! ! . 6 0("7)( '*" (6 7611""" ## 17 ((1 xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) """## $%&!%' ( ()* + ,-%&!% 8 reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 329.5 20.9 12.8 1.7 97 ref 13 code a b c d e f g max 330.5 21.5 13.5 2.3 99 17.4 14.5 min 12.972 0.823 0.504 0.067 3.819 0.512 max 13.011 0.846 0.532 0.091 3.898 0.571 metric imperial tr1 option (qty 400) imperial min 6.988 0.823 0.520 0.075 2.350 0.512 max 178.5 21.5 13.8 2.3 66 12 14.5 min 177.5 20.9 13.2 1.9 65 ref 13 metric max 7.028 0.846 0.543 0.091 2.598 0.571 """## $%&!%' ( ()* + ,-%&!% 9 ()( (0(0 ( 0('( ()*: " 7611""" ## 17 0 5 1)() ; ()( ( ((()() )0 ( # )( ( '( ()* () 7 ( ( 6 7611""" ## 1" 5())1 () 71 +77)() </2 (0(0( 7 0 )( # *7(=7 ) "0) 0 (>#? 7( # ( @% a2-b@&#. ;-* @ & ? -' @%&+# ) "0 ? .&&c =0 ) ? %d# * ? ( 0( (77 > ()9&a2# e 0 ! (% f 777(0 !# >!# # (0 *5. (()# 2() )(0 ( 0 (> ()) "()? 7( # 2 ) 0 % + g 0 ) # !"# $# %" & !&! #7 )0(g)0#-) 0 -2() (9&%. -h+)6i,!&j% %54!& +2(>6i,!&j% %549&, k ("""## () ( ( ' /(((0 7( ? (" # ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per je de c je s d47f ??? guidelines ) |
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